Regensburg 2002 – wissenschaftliches Programm
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SYPO: Plasmaoberflächentechnik – Beschichten, Ätzen und Modifizieren
SYPO I: HV I
SYPO I.1: Hauptvortrag
Montag, 11. März 2002, 14:00–14:45, HS 32
The physics of plasma-enhanced CVD for large area coating — •Christoph Hollenstein, Alan Howling, and Laurent Sansonnens — Centre de Recherche en Physique des Plasmas, Ecole Polytechnique Fédérale de Lausanne, PPH Ecublens, CH-1015 Lausanne, Switzerland
Designing plasma-enhanced chemical vapour deposition (PECVD) reactors to coat large area glass plates (∼1 m2) for flat panel display and solar cell manufacturing raises challenging issues in physics and chemistry as well as mechanical, thermal, and electrical engineering, and material science. In such reactive glow discharge plasmas, excited at RF frequency (from 13.56 MHz to 100 MHz), the thin film deposition uniformity is determined by the gas flow distribution, as well as the RF voltage distribution along the electrodes, and by local plasma perturbations at the reactor boundaries. All these aspects can be approached by analytical and numerical modelling. Moreover the film properties and the deposition rate are largely determined by the plasma chemistry involving the neutral radicals contributing to film growth, the effect of ion bombardment, and the formation and trapping of dust triggered by homogeneous nucleation. This paper will review the progress in this for the industrial application very important field.