Regensburg 2002 – scientific programme
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TT: Tiefe Temperaturen
TT 22: Postersitzung III: Syst. korr. Elektr.: Theorie II (1-15), Metall-Isol.- und Phasenüberg
änge (16-33), SL: Massivmat., Bandl., Pinning, Vortexdyn., Transport, Korngr. (34-43), Niedrigdim. Syst., Magnetotransport (44-63)
TT 22.32: Poster
Thursday, March 14, 2002, 14:00–17:30, A
Stripe conductivity in La2−xSrxNiO4 obtained from electronic Raman scattering — •P. Lemmens3,4, V. Gnezdilov1, Yu. Pashkevich2, K.-Y. Choi4, G. Güntherodt4, J.M. Tranquada5, D.J. Buttrey6, and K. Nakajima7 — 1B.I. Verkin Inst. for Low Temp. Physics NASU, Kharkov, Ukraine — 2A.A.Galkin Donetsk Phystech NASU, Donetsk, Ukraine — 3IMNF, TU Braunschweig, Mendelsohnstr. 3, Braunschweig, Germany — 42. Phys. Inst. RWTH Aachen, Aachen Germany — 5BNL, Upton, NY, USA — 6Univ. of Delaware, Newark, Delaware, USA — 7ISSP Tokyo, Tokai, Ibaraki, Japan
We report the results of electronic Raman scattering experiments on
La2−xSrxNiO4 with x = 1/3 and x=0.225 that exhibit
commensurate and incommensurate charge-stripe order with one or
less than 1 hole per Ni site along the stripe, respectively.
Markedly different Raman response is observed in the B2g
symmetry component. A charge ordering induced shift of spectral
weight and pseudo gap formation is investigated. It is used to
pinpoint a remnant conductivity along the charge threads in the
incommensurate stripe-ordered state.
We acknowledge support by DFG SPP1073, NATO and INTAS.