Aachen PK 2003 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
P: Plasmaphysik
P 10: Poster II
P 10.23: Poster
Tuesday, March 18, 2003, 17:30–19:15, Foyer
SF6/Ar/O2 plasma jet etching of Si and SiO2 — •Thomas Arnold1, Sergey Grabovski2, Axel Schindler1, and Hans-Erich Wagner2 — 1Leibnitz-Institut für Oberflächenmodifizierung Leipzig — 2Ernst-Moritz-Arndt-Universität Greifswald
A high-rate chemical dry etching technique based on the plasma jet principle is presented. In this system a microwave-excited Ar/SF6/O2 plasma jet is used to create reactive radicals for etching silicon and SiO2. The dependence of the etch rate on the gas mixture and ambient pressure has been determined. Plasma diagnostic techniques such as optical emission spectroscopy, mass spectrometry and pyrometry were applied to determine plasma parameters, etching species, and surface temperature.
Plasma chemical processes inside the Ar/SF6 plasma jet and on the silicon and SiO2 substrate surface are simulated by means of computational models. The kinetic model considers the formation of reactive F and F− radicals and the production of SFx and SFx− by electron impact, electron attachment and significant reverse processes.
The etch process model describes the chemical removal of silicon by F and F− producing volatile SiF4 molecules. Comparisons between the computational models and experiments with chosen conditions show a qualitative correspondence.
In order to characterize the gas flow in the plasma jet and on the substrate surface computational fluid dynamics simulations were done.