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P: Plasmaphysik

P 17: Poster III

P 17.14: Poster

Donnerstag, 20. März 2003, 17:30–19:15, Foyer

Nanoscale Microelectronics by Plasma and Electron Beam Techniques — •Mamoud Ghoranneviss^1,2, Guenther Benstetter¹, Heinrich Hora^1,3, Reinhard Hoepfl¹, Mamoud R. Hantehzadeh², and Amir Sari² — ¹Fachhochschule, 94469 Deggendorf — ²Plasma Physics Res. Ctr., I.A.University, 14665 Tehran, Iran Iran — ³Dept. Theoret. Physics, University of New South Wales, Sydney 2052, Australia

For production of transistor electronics for dimensions below the optical or ultraviolett wavelengths, technologies with electron beams are studied. In contrast to producing n- or p-conductivity by substituting III or V atoms in the silicon lattice, the splitting of bonds in n-silicon by electron beam irradiation results in p- silicon by tangling bonds [1]. This can be reverted by thermal treatment. The same can be used for production of p-n junctions in silicon, gallium arsenide or conducting polymer diodes and solar cells. The effect of braking bonds by irradiation with electron beams in the range of 75 keV is considered following preceding experiments, and new experimental results are reported. [1] Hinckley s., Hora H., Kelly J.C., physica status solidi A51, 419 (1979)