Dresden 2003 – wissenschaftliches Programm
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CPP: Chemische Physik und Polymerphysik
CPP 21: POSTER B
CPP 21.17: Poster
Dienstag, 25. März 2003, 19:00–21:00, ZEU/250
Low Temperature Passivation of Crystalline Silicon with Organic Self-Assembled Monolayers — •Motomu Tanaka1, Murat Tutus1, Thomas Dittrich2, Oliver Purrucker1, Martin Eickhoff3, and Joerg Rappich4 — 1Biophysik E22, TU Muenchen — 2E16, TU Muenchen — 3Walter Schottky Institut, TU Muenchen — 4Abt. Si-Photovoltaik, Hahn-Meitner-Institut
Surface engineering of crystalline silicon (c-Si) with ultrathin organic films in aqueous solution realizes the low temperature passivation of surface states and the chemical functionalization. In this study, we deposited aryl monolayers with omega-substitutions onto hydrogen-terminated c-Si by means of electrochemical grafting. Flexible substitution enables one to control the surface free energy, surface dipoles, and surface charges. Topography of the engineered surface was checked with AFM, while the chemical composition was monitored with x-ray photoelectron spectroscopy (XPS). The density of the non-radiative recombination centers could quantitatively be determined by pulse photoluminescence measurements, confirming the effective passivation in air as well as in water. Electrochemical stability of the engineered surfaces was checked by impedance spectroscopy under various bias potentials. The obtained results strongly suggested a large potential of this strategy for direct engineering of c-Si surfaces with various chemical functionalities.