Dresden 2003 – wissenschaftliches Programm

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CPP: Chemische Physik und Polymerphysik

CPP 22: POSTER C

CPP 22.65: Poster

Donnerstag, 27. März 2003, 12:00–14:00, ZEU/250

Influence of ion fluence on the sputter rate of polymers — •Jurgita Zekonyte, Vladimir Zaporojtchenko, Joern Erichsen, and Franz Faupel — Lehrstuhl fuer Materialverbunde, Technische Fakultaet der Universtitaet Kiel, Kaiserstr. 2, 24143 Kiel, Deutschland

Polystyrene (PS) and poly-alpha-methylstyrene (PalphaMS) were chosen to investigate the influence of the chemical composition on the sputter rate at different argon ion fluence using low 1 keV energy. The etching rate was measured using a profilometer (Dektak 8000) and x-ray photoelectron spectroscopy (XPS) technique. At the same time the surface chemical modification was studied using XPS. The well known effects such as polymer degradation and cross-linking associated with ion polymer interaction were observed. Comparing the etching rate of both polymers it was found that the chemical structure of the polymer played the dominant role in etching rate at low ion fluence. PS is a typical cross-linking polymer and in PalphaMS chain scission dominates during ion bombardment. This lead for PalphaMS to a sputter rate that is one order of magnitude higher compared to PS. Nevertheless, the sputter rate for both polymers decreased drastically during continued exposure to about 5 x 10E13 ions/cm2 and reached a saturation value at prolonged expose, which is close to rigid materials. At higher irradiation fluencies the polymer surface obtained a completely different structure, which lead to the different sputter rate behavior compared with the initial stage. Comparing the sputter rate to the various polymer properties a correlation between Tg, cross-link density, and sputter rate was found.