Dresden 2003 – scientific programme

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DF: Dielektrische Festkörper

DF 7: Poster

DF 7.15: Poster

Wednesday, March 26, 2003, 14:30–18:00, P2a

Ferroelectric Properties of Mesoscopic Structures Prepared by Nanoimprint Lithography — •Catalin Harnagea, Marin Alexe, Dietrich Hesse und Ulrich Gösele — Max-Plank-Institut fü Mikrostrukturphysik, D-06120 Halle (Saale), Germany

Mesoscopic ferroelectric PZT and SBT structures, prepared by electron-beam direct writing , had previously been shown to be functional, viz. polarizable and switchable without crosstalk. If non-volatile ferroelectric RAMs (NV-FRAMs) of Gigabit memory density shall be developed, the preparation of mesoscopic ferroelectric structures will, however, be necessary by more economic means than by the slow and expensive electron-beam direct writing. We have prepared arrays of mesoscopic ferroelectric PZT structures with lateral sizes in the few-hundred-nanometer to one-micrometer range using nanoimprint lithography. The ferroelectric properties of the mesoscopic structures were investigated using scanning force microscopy in piezoresponse mode. A comparison between structures prepared by the MOD and sol-gel chemical routes will be given. The effects of the bottom electrode and of a promoting layer on polarization hysteresis and the domain structure of individual cells will be shown.