Dresden 2003 – scientific programme

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DS: Dünne Schichten

DS 1: FV-internes Symposium „Dünnschichtanalytik“ I

DS 1.2: Invited Talk

Monday, March 24, 2003, 10:10–10:50, GER/37

Scanning probe methods for thin film analysis — •Mathias Getzlaff — University of Hamburg, Institute of Applied Physics, Jungiusstr. 11, D-20355 Hamburg — now at: University of Düsseldorf, Institute of Applied Physics, Universitätsstr., D-40225 Düsseldorf

Thin film systems often exhibit extraordinary properties due to their lateral confinement. Changes in structural behavior affect electronic properties. Thus, experimental techniques which combine extreme lateral resolution with the ability to gain spectroscopic details of electronic states are highly recommended. In this contribution the possibilities of scanning tunneling microscopy / spectroscopy for thin film analysis are demonstrated by means of simultaneous acquisition of topographic and spectroscopic information.

The deposition process of thin films is highly dependent on the properties of the underlying substrate. This sensitivity is exemplarily shown for the growth of metals on nanopatterned templates.

During thin film growth faults in the stacking sequence may occur. This identification is demonstrated for rare earth metals making use of laterally resolved determination of electronic properties.

Impurities in well-ordered crystals often induce lattice deformations which results in enormous strain. In bulk material it can be relieved on a large length scale but it may be inhibited in confined systems which allows the determination of structural changes inside thin films.