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DS: Dünne Schichten

DS 1: FV-internes Symposium „Dünnschichtanalytik“ I

DS 1.4: Hauptvortrag

Montag, 24. März 2003, 11:30–12:10, GER/37

Depth microscopy on ultra thin layers using energetic ion beams — •Günther Dollinger — Physik Department E 12, TU München, 85748 Garching

A key role for the analysis of ultra thin films plays the analysis of elemetal depth profiles, i. e. the quantitative analysis of all elements including impurities at surfaces, within the layers and at interfaces. Rutherford Back-Scattering (RBS) and Elastic Recoil Detection (ERD) are standard tools to analyse elemental profiles of thin films using energetic ion beams. The last decade these standard techniques have been developed to a new kind of depth microscopy with significantly improved depth resolution compared to the original techniques. Even monolayer depth resolution has been achieved close to the surface. The necessary equipment for depth microscopy using energetic ion beams and its power analysing ultra thin layers will be presented. The advantages and also the drawbacks will be discussed along the analysis of ultra thin high k gate oxide materials and ultra flat contacts for future microelectronics applications. Another topic will be the analysis of implantation profiles of low energy carbon ions incarbon with respect to the growth of tetragonal amorphous carbon thin films.