Dresden 2003 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 10: Laserverfahren zur Schichtherstellung und Oberfl
ächenmodifizierung II

DS 10.1: Vortrag

Dienstag, 25. März 2003, 10:15–10:30, GER/37

Mechanisms of stress formation in pulsed laser deposited thin metallic films — •Thorsten Scharf and Hans-Ulrich Krebs — Institut für Materialphysik, Universität Göttingen, 37073 Göttingen

It is well known from different thin film deposition techniques, such as thermal evaporation and sputtering, that film stress strongly depends on the deposition parameters. As often very high stress in the order of 10⁹ Pa is observed it is of great importance to understand the origin of stress formation in order to controll it. Pulsed laser deposition (PLD) with its energetic particles and an easy way to reduce ion energy by using an inert background gas is a perfect system to look at the dependency of stress on particle energy. Additionally the pulsed character gives natural breaks for measuring stress in-situ without noise by oncoming particles and heating of the substrate. Furtheron the development of stress at interfaces of two different metals is discussed with respect to the different thin film growth modes, which is especially important for the formation of very thin multilayers.