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DS: Dünne Schichten

DS 13: Strukturbildung

DS 13.4: Vortrag

Mittwoch, 26. März 2003, 17:30–17:45, GER/37

Characterization of self-assembled nanostructures formed by Cu deposition onto VSe₂ surfaces — •S. Hollensteiner¹, E. Spiecker¹, W. Jäger¹, H. Schroeder², and H. Haselier² — ¹Technische Fakultät der CAU zu Kiel, D-24143 Kiel — ²Institut für Festkörperforschung, D-52425 Jülich

Self-assembled networks of linear wire-like nanostructures are forming upon deposition of Cu onto VSe₂ crystals as has been shown^[1,2]. So far, there is little knowledge about the microscopic structure and the early formation stages. Applying UHV electron beam evaporation onto layered VSe₂ crystals, we have prepared samples with low nominal Cu coverages ranging from 0.4 nm to 2.5 nm. The self-assembled structures have been studied in detail using scanning probe techniques and various methods of analytical transmission electron microscopy (TEM). Few nanostructures with lateral dimensions of about 150 nm form already at the lowest coverage. At higher coverages, an additional network with smaller lateral dimensions ≤ 40 nm is observed. The TEM investigations show that almost all nanostructures consist of two parallel strands of crystalline grains with a nearly epitaxial orientation relationship to the substrate. The nanostructures are preferentially aligned along low-index substrate crystal directions and form hexagonal and square-like meshes. A possible mechanism of the nucleation and the self-assembled growth of the nanostructures will be discussed. [1] R. Adelung et al, Adv. Mat. 14 (2002), 1056. [2] S. Hollensteiner et al., Mat. Sci. Eng. C (in press).