DPG Phi
Verhandlungen
Verhandlungen
DPG

Dresden 2003 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

DS: Dünne Schichten

DS 17: Ionenimplantation II

DS 17.10: Talk

Thursday, March 27, 2003, 12:30–12:45, GER/37

Dynamic epitaxy and luminescence after Ba implantation in α-quartz — •S. Dhar1, S. Gasiorek1, P. K. Sahoo1,2, V. N. Kulkarni1,2, U. Vetter1, H. Hofsäss1, and K.-P. Lieb11Universität Göttingen, II. Physikalisches Institut, Bunsenstasse 7-9, 37073 Göttingen, Germany — 2Indian Institute of Technology, Kanpur, India

Recently, we have developed two methods for solid phase epitaxial regrowth (SPEG) of ion beam damaged α-quartz, namely chemically guided SPEG [1,2] and dynamic SPEG [3]. In this report we present the results of dynamic SPEG and optical properties of α-quartz irradiated with 175 keV Ba ions with a fluence of 1x1015 ions/cm2 at temperatures in the range of RT - 900oC using the Göttingen 500 kV ion implanter. Rutherford backscattering-channeling analysis of Ba irradiated sample at RT shows the formation of a 170 nm thick amorphous SiO2 layer on the sample surface. The thickness of this amorphous layer decreases with increasing temperature during irradiation. At 850 - 900oC when ion irradiation-induced damage and dynamic thermal annealing compensate each other, Ba irradiation produces almost no damage in α-quartz. The cathodoluminescence analyses show the blue luminescence in all the samples irradiated above 600oC. In addition to this, a peak in the violet range also appears in the samples irradiated above 800oC.
[1]F. Roccaforte, et al. Appl. Phys. Lett. 73, 1349 (1998); 75, 2903 (1999); 76, 3709 (2000); J. Appl. Phys. 89, 3611 (2001). [2]S. Gasiorek, S. Dhar, and K. P. Lieb, Phys. Rev. B (submitted). [3]S. Dhar, W. Bolse, K. P. Lieb, J. Appl. Phys. 85, 3120 (1999).

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2003 > Dresden