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DS: Dünne Schichten
DS 17: Ionenimplantation II
DS 17.3: Talk
Thursday, March 27, 2003, 10:45–11:00, GER/37
Synthesis of iron nitrides by N2+ ion implantation in 57Fe/Si bilayers — •Velimir Milinovic1, Natasa Bibic1,2, Sankar Dhar1, Klaus-Peter Lieb1, Momir Milosavljevic2, Martin Weisheit3, Hans-Ulrich Krebs3, and Peter Schaaf1 — 1Universität Göttingen, Zweites Physikalisches Institut, Bunsenstrasse 7-9, 37073 Göttingen, Germany — 2The Institute of Nuclear Sciences VINCA, Atomic Physics Laboratory, P.O.Box 522, 11001 Belgrade, Yugoslavia — 3Universität Göttingen, Institut für Materialphysik, Hospitalstrasse 7-9, 37073 Göttingen, Germany
The evolution of iron nitrides through nitrogen ion irradiation of 57Fe/Si bilayers at ambient temperature, was investigated. The 57Fe layer were deposited to a thickness of 30 nm on a Si(100) wafer by pulsed laser deposition. After deposition, the samples were irradiated with 22 keV N2+ ions at various fluences, from 0.7 − 1017 ions/cm2. The N2+ ions were supplied by an electron cyclotron resonance ion source at the TESLA facility in Vinca, Belgrade. All samples were analyzed in Göttingen by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analysis (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The CEMS and XRD results clearly show the evolution of iron nitride phase. For fluences in the range of about 1 × 1017 ions/cm2 the mixture of ε-Fe2N phase and α-Fe with Si as a substitution and N interstitial atoms was observed, while, for the highest fluence of 2.1 × 1017 ions/cm2, predominantly the paramagnetic ε-Fe2N phase was detected. It can be concluded that the iron layer fully reacted.