Dresden 2003 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 17: Ionenimplantation II
DS 17.4: Vortrag
Donnerstag, 27. März 2003, 11:00–11:15, GER/37
Interface mixing of Fe/Si bilayers: Effects of the ion charge state and the crystallinity of the Si substrate — •S. Dhar1, N. Bibic1,2, V. Milinovic1, M. Milosavljevic1,2, P. Schaaf1, and K.-P. Lieb1 — 1Universität Göttingen, II. Physikalisches Institut, Bunsenstasse 7-9, 37073 Göttingen, Germany — 2The Institute of Nuclear Sciences VINCA, P. O. Box 522, 11001 Belgrade, Yugoslavia
We have studied the possible influence of the ion charge state and the microstructure (crystalline or amorphous) of the Si substrate on the mixing at the Fe/Si interface. Thin 58Fe or 57Fe layers of 32 nm thickness deposited on either pre-amorphized or crystalline Si (100) substrates are bombarded at room temperature with 100 keV Ar1+ or Ar8+ or 250 keV Xe1+ or Xe17+ ions. The fluence is varied from 1x1015 to 2x1016 ions/cm2. The samples are characterized by means of RBS at 0.9 - 3 MeV particle energy, TOF-ERDA with a 53 MeV 127I10+ beam, XRD, and conversion electron Mössbauer spectroscopy. Mixing rate in the Ar8+ irradiated case is 50% higher as compared to the one obtained for Ar1+ ion irradiation. However, no influence of the charge state has been observed between Xe1+ and Xe17+ ions. The mixing rate at the interface of the Fe layer deposited on pre-amorphized Si substrate is two times higher compared to the one obtained for the crystalline Si substrate. XRD analyses do not show any characteristic signals indicating the formation of new phases. However, Mössbauer analysis shows the formation of Fe-Si solid solutions and silicide phases in all the cases.