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Dresden 2003 – scientific programme

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DS: Dünne Schichten

DS 17: Ionenimplantation II

DS 17.9: Talk

Thursday, March 27, 2003, 12:15–12:30, GER/37

Solid Phase Epitaxial Growth of α-quartz after Rb-ion implantation and annealing in oxygen — •S. Gasiorek1,2, S. Dhar1, K.-P. Lieb1, T. Sajavaara3, and J. Keinonen31Zweites Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7/9, D-37073 Göttingen, Germany — 2The Henryk Niewodniczański Institute of Nuclear Physics, ul. Radzikowskiego 152, 31-342 Kraków, Poland — 3Accelerator Laboratory, University of Helsinki, FIN-00014 Helsinki, Finland

The Solid Phase Epitaxial Regrowth (SPEG) of 175 keV Rb+ implanted α-quartz was studied during thermal annealing in air or in 18O2 up to 1170 K. The recovery of radiation damage and epitaxy was investigated in detail as a function of the implanted Rb content, temperature, and the 18O2 pressure. The evolution of the damage layer and Rb depth distributions was examined by Rutherford backscattering spectrometry in channeling geometry (RBS-C). Time-of-flight elastic recoil detection analysis (TOF-ERDA) of the 16O and 18O profiles monitors the role of the oxygen exchange between the annealing gas and SiO2 matrix. Complete solid-phase epitaxial regrowth (SPEG) of the amorphized layers was observed after a 1-h annealing in air (at 1170 K) or in 18O2 (at 1130 K). The regrowth kinetic during air annealing follows a two-stages Arrhenius process with activation energies of 3.6 ± 0.4 eV and 0.6 ± 0.2 eV above and below the 1070 K. The observed planar recrystallization of the amorphized α-SiO2, the 16O ⇔ 18O exchange, and the related Rb migration are explained in terms of the SiO2-network topology.

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