Dresden 2003 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 18: Ionenstrahlverfahren I – Schichtherstellung und Schichtwachstum
DS 18.2: Vortrag
Donnerstag, 27. März 2003, 15:30–15:45, GER/37
Biaxially textured ITO films with IBAD — •Karola Thiele1, Carsten Herweg1, Lars-Oliver Kautschor1, Sibylle Sievers1, Jörg Hoffmann2, and Herbert C. Freyhardt1,2 — 1Institut für Materialphysik, Universität Göttingen, Windausweg 2, 37073 Göttingen — 2Zentrum für Funktionswerkstoffe gGmbH, Windausweg 2, 37073 Göttingen
Biaxially aligned Indium Tin Oxide (ITO) thin films were prepared by an Ion-Beam Assisted Deposition (IBAD) process.
Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 x 10−3 Ωcm for 300 nm and 250 nm thickness, respectively, were obtained.
Investigations of the texture evolution and surface morphology during film growth were carried out and compared to the texture development in YSZ (Yttria-Stabilized Zirconia). Different mechanisms seem to be responsible for the texturing in both materials. An in-plane texture of 12.6∘ FWHM for a 1 µm thick IBAD-ITO film has been achieved so far.
The quality of these films as electrically conductive buffer layers for high temperature superconductors has been demonstrated by the subsequent deposition of high-current carrying YBCO-films deposited by thermal coevaporation using a 3-5 nm thick non-insulating Y2O3 interlayer. A jC of 0.76 MA/cm2 (77K, 0T) has been obtained for a 1 cm x 1 cm sample with ITO of 20∘ FWHM.