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DS: Dünne Schichten
DS 18: Ionenstrahlverfahren I – Schichtherstellung und Schichtwachstum
DS 18.5: Vortrag
Donnerstag, 27. März 2003, 16:15–16:30, GER/37
Synthesis of metallic and semiconducting nanoclusters on amorphous carbon film — •Elsa THUNE1, Petra REINKE1, Katharina SAUTHOFF2, and Michael SEIBT2 — 1II. Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7-9, 37073 Göttingen, Germany — 2IV. Physikalisches Institut, Universität Göttingen, Bunsenstrasse 13-15, 37073 Göttingen, Germany
Nanosized-clusters are deposited by a monoenergetic mass selected ion beam with low energies (10-500 eV) on amorphous carbon substrates. Gold has been used as a model system to study the influence of the ion energy, the fluence and the temperature on the cluster size distribution. For impact energies below 100 eV, surface processes dominate the clusters nucleation and growth. The different competing processes and their importance in driving clusters formation can be described qualitatively from these observations. When the ion energy is increased above 350 eV, the clusters size drastically drops below 5 nm. Copper, Cobalt and Aluminium clusters are bombarded with reactive ion beams (Oxygen, Nitrogen), which will allow the formation of a wide variety of insulator, semiconductor and core-shell clusters. It will be discussed whether control over the progression of the reaction from the cluster surface to the core can be achieved by varying the ion energy. The clusters are analyzed with different methods such as Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM) and X-Ray Photoelectron Spectroscopy (XPS) to determine their size distribution, composition and structure.