Dresden 2003 – scientific programme

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DS: Dünne Schichten

DS 20: Schichteigenschaften

DS 20.2: Talk

Thursday, March 27, 2003, 10:30–10:45, GER/38

Thermal stability of sputtered titanium oxynitride films — •Sodky Hamed Mohamed^1,2, Oliver Kappertz¹, Tim Niemeier¹, Robert Drese¹, and Matthias Wuttig¹ — ¹I. Physikalisches Institut (IA) der RWTH Aachen Lehrstuhl Physik neuer Materialien, D- 52056 Aachen, Germany — ²Physics Department, Faculty of Science, South Valley, Sohag, Egypt

TiO2 films have many interesting optical and photocatalytic properties. For a number of applications it is important to have a good thermal stability of the film properties. Therefore the influence of the annealing temperature on the structural, mechanical and optical properties of amorphous TiOxNy films was investigated with the goal to produce dense films with high refractive index and good temperature stability. Rutherford backscattering spectroscopy measurements showed no variation in the stoichiometry upon annealing for samples prepared in pure oxygen, while the samples prepared in an oxygen/nitrogen mixture were oxidized to TiO2 above 300C. X- ray diffraction showed that samples, prepared in pure oxygen or containing only a small amount of nitrogen, crystallize to TiO2 with anatase phase, while samples containing a relatively high amount of nitrogen crystallize to TiO2 with rutile phase. The crystallization temperature is shifted to higher temperatures with increasing amount of nitrogen in the sample. Crystallization is accompanied by a mechanical stress build up as revealed by wafer curvature measurements. The corresponding change of optical properties such as band gap and refractive index and the film density were measured by optical spectroscopy, spectroscopic ellipsometry and x-ray reflectometry, respectively.