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DS: Dünne Schichten
DS 23: Elektrische und optische Eigenschaften II
DS 23.4: Vortrag
Donnerstag, 27. März 2003, 16:00–16:15, GER/38
Making field-effect transister — For electron-doping in EuO — •Yutaka Furubayashi1, Hao Tjeng1, Mihaita Popinciuc2, Andreas Gerben3, and Habil Kohlstedt3 — 1II Physikalische Institut, Universität zu Köln — 2Materials Science Centre, Rijksuniversiteit Groningen — 3Institut für Festkörperforschung, Forschungszentrum Jülich
We are investigating a single-crystalline (epitaxial) field effect transister (FET), with an MBE. As a preliminary experiment, we made MgO thin film (60nm) on Nb:SrTiO3(100). The RHEED and XRD results showd that the MgO film was grown epitaxially with the orientation of MgO(100)/Nb:SrTiO3(100). Besides, we found that the breakdown field was 2.8 x 108 V/m and is sufficient to dope electrons and modify the transport properties for EuO.
Now we use SrRuO3 as a gate metal because it has higher carrier density than Nb:SrTiO3 and we can avoid band-bending due to the depletion in the interface between gate-metal and insulator. In near future, we will investigate the actual transport properties for EuO on this FET.