Dresden 2003 – scientific programme

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DS: Dünne Schichten

DS 24: Poster

DS 24.11: Poster

Tuesday, March 25, 2003, 14:30–17:00, P2a

Evolution of Si surface topography during low-energy ion beam erosion — •Bashkim Ziberi, Frank Frost, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstrasse 15, D-04318 Leipzig, Germany

Recently, the fabrication of regular structures with nanometer dimensions on III/V semiconductor surfaces originated from self-organisation processes during ion beam erosion (structure dimensions < 100 nm) has attracted a great deal of attention. This pattern formation process during ion beam erosion offers an alternative fabrication method for large-area nanostructured surfaces.

In principle, similar self-organized surface topographies are expected for the erosion of Si surfaces. In this contribution first detailed experimental results will be presented for the topography evolution of Si during low-energy ion beam erosion (ion energy ≤ 2000 eV) at normal and oblique ion incidence with simultaneous sample rotation. By variation of ion beam parameters (ion energy, ion incidence angle) a great variety of different surface topographies are generated. Thus, a transition from holes to nanometer-size dot structures was found. First quantitative discussion of this complex behaviour will be given.