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Dresden 2003 – scientific programme

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DS: Dünne Schichten

DS 24: Poster

DS 24.28: Poster

Tuesday, March 25, 2003, 14:30–17:00, P2a

Stress evolution during sputter deposition of Cu thin films: Effects of sputter deposition conditions — •Mirela Pletea, Winfried Brückner, Horst Wendrock, Rainer Kaltofen, and Claus M. Schneider — Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, PF 270116, D-01171 Dresden

The development of stress during and after the growth of Cu thin films as a function of the sputtering conditions (sputtering pressure, deposition rate) and of the film thickness is reported. It was determined by means of in-situ wafer curvature measurements. In order to correlate stress evolution and microstructural development, microstructural analyses were made on samples after stress measurements by SEM, EBSD and AFM investigations. In-situ stress measurements on Cu films with thickness between 50 and 800 nm revealed that (a) the stress developed during sputter deposition ranges from tensile to compressive, depending on the sputtering pressure and (b) an extensive stress relaxation occurs after deposition leading to an almost complete reduction of the stress after about 10 h for all values of sputtering pressure. The deposition rate has a very weak influence on the stress development during the early stage of deposition as well as at higher film thicknesses. Models for the explanation of the experimental observations are discussed. This work was supported by DFG (Project BR 1473/4-1).

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