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Dresden 2003 – scientific programme

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DS: Dünne Schichten

DS 24: Poster

DS 24.43: Poster

Tuesday, March 25, 2003, 14:30–17:00, P2a

Growth of Aluminiumoxide Insulating Layers on Organic Semiconductors — •S. Sellner1, A. Gerlach2, F. Schreiber2, J. Pflaum3, A. Schön4, B. Gompf4, J. O. Ossó5, and H. Dosch1,51Institut für Theoretische und Angewandte Physik, Universität Stuttgart, 70550 Stuttgart, Germany — 2Physical and Theoretical Chemistry Laboratory, University of Oxford, Oxford OX13QZ, UK — 33. Physikalische Institut, Universität Stuttgart, 70550 Stuttgart, Germany — 41. Physikalische Institut, Universität Stuttgart, 70550 Stuttgart, Germany — 5Max-Planck-Institut für Metallforschung, 70569 Stuttgart, Germany

In several device geometries for molecular electronics, the insulating layer of aluminiumoxide between a gate electrode and the organic semiconductor plays a crucial role. However, it has become evident that the preparation is by no means trivial. We report on our attempts to prepare well-defined aluminiumoxide layers on various surfaces of crystalline organic semiconductors. The aluminiumoxide layers are deposited by sputtering. The interdiffusion of aluminiumoxide into the organic material and the morphology of the layers are studied ex-situ by X-ray reflectivity (specular and diffuse) and atomic force microscopy (AFM). We find that under non-optimised preparation conditions the definition of the aluminiumoxide layer appears to be rather poor, and we discuss possible ways to improve the preparation. We also study thermally-induced post-growth interdiffusion processes. Finally, the implications for high breakthrough voltages and for device stability in molecular electronics are discussed. This project is supported by the DFG (OFET-Schwerpunkt-Programm).

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