Dresden 2003 – scientific programme

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DS: Dünne Schichten

DS 5: Verfahren zur Schichtherstellung II

DS 5.2: Talk

Monday, March 24, 2003, 10:30–10:45, GER/38

Thin polycrystalline silicon layers formed by aluminium-induced crystallization — •Jens Schneider, Stefan Gall, Martin Muske und Walther Fuhs — Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin

The preparation of thin large-grained polycrystalline silicon (poly-Si) layers on glass is of great interest for the development of solar cells and other large-area devices. Such layers can be formed by aluminium-induced crystallization (AIC) of amorphous silicon (a-Si).

The AIC is based on an annealing step at temperatures below the eutectic temperature of the Al/Si system. During this annealing step an initial glass/Al/a-Si structure is transformed into a glass/poly-Si/Al+Si structure. Between the Al and the a-Si layer of the initial glass/Al/a-Si stack, an oxide layer is needed to ensure the formation of a continuous polycrystalline silicon film. The oxide layer is formed by exposure of the Al layer to air or oxygen atmosphere for a specific period of time prior to the a-Si deposition. The grain size of the polycrystalline silicon, process time and process temperature are strongly dependent on the properties of the oxide layer. In this talk, we report on studies on the influence of different oxidation conditions on the formation of the continuous poly-Si film.