Dresden 2003 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
DS: Dünne Schichten
DS 6: Silicidschichten
DS 6.1: Talk
Monday, March 24, 2003, 11:00–11:15, GER/38
EPITAXIAL GROWTH OF CrSi2 ON SILICON — •Olga Filonenko, A. Mogilatenko, H. Hortenbach, G. Beddies, and H.-J. Hinneberg — Institute of Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany
The formation of chromium disilicide on silicon substrate has drawn a special interest, since CrSi2/Si systems can find extensive application in thermoelectric technology. This study reports on structural investigations of CrSi2 thin films combining XRD, TEM and SEM analysis. Silicide layers were grown on Si(001) by MBE using the template technique. The deposition of 0.4 nm Cr metal layer at room temperature prior to the codeposition of Cr and Si at 700∘C was found to cause the formation of the continuos epitaxial silicide film. The obtained layer consists of regions with two completely different morphologies, which are caused by the film growth with two orientation relations. The major part of the film has smooth surface and interface. It consists of crystallites growing with CrSi2(001)[100] ∥ Si(001)[110]. The film growth with CrSi2(001) ∥ Si(001) results in two perpendicular domains which can be explained according to the crystal symmetry. A smaller part of crystallites has rough surface and grows with CrSi-2{112}[110] ∥ Si(001)[110]. The preferential growth with the mentioned orientation relation correlates directly with the lattice mismatches and the atom density at the interface.