Dresden 2003 – scientific programme
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DS: Dünne Schichten
DS 8: Harte Schichten II
DS 8.2: Talk
Monday, March 24, 2003, 15:30–15:45, GER/38
Role of the film composition for cBN growth — •Yongkang Le and Hans Oechsner — FB Physik und IFOS der Uni Kaiserslautern, Erwin-Schrödinger Str., D-67653 Kaiserslautern
Boron nitride (BN) films have been deposited on polished (100) Si substrate by bias-assisted RF magnetron sputtering of hBN targets with Ar/N2-mixture as working gas. AES, XPS and FTIR have been employed for the film characterization. The growth of cubic phase (cBN) has been studied in dependence of the N2-content in the working gas, the substrate temperature and the substrate bias. It is found that both the nucleation of cBN and its subsequent growth are mainly controlled by the establishment of full BN-stoichiometry. This corroborates that more stringent deposition conditions as a narrow bias window and elevated substrate temperatures are required for cBN growth with a pure Ar-discharge than in the case when sufficient N2-content (above 7 %) is supplied in the Ar/N2-working gas.