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DS: Dünne Schichten

DS 8: Harte Schichten II

DS 8.3: Vortrag

Montag, 24. März 2003, 15:45–16:00, GER/38

In situ stress measurement and stress relaxation during Magnetron sputter deposition of cubic boron nitride — •Barbara Abendroth, Andreas Kolitsch, and Wolfhardt Möller — Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Bautzner Landstr. 128, 01328 Dresden

Cubic Boron nitride (cBN) films have been grown by unbalanced r.f. magnetron sputtering from hexagonal boron nitride (hBN) target in Ar/N₂ atmosphere. The depth resolved evolution of the intrinsic stress was obtained by measuring cantilever bending and film thickness simultaneously and in situ. The results show, in agreement with results that were obtained previously from ion beam assisted deposition (IBAD) [1], that the hBN and cBN layers exhibit different levels of stress under constant deposition conditions. The stress increases from less than -4 GPa to very high values (-9 GPa) after the coalescence of the cBN nuclei. It is therefore possible to establish the point of cBN nucleation instantly. Simultaneous medium energy ion bombardment during growth, is used to significantly relaxe the stress in the films.In magnetron sputtering the simultaneous growth of cBN and stress relaxation by energetic ion bombardment is realized by applying a combination of negative high and low voltage bias pulses to the substrate. In this way, thick cBN films with a stress as low as -1 GPa can be produced. The effect of combined low energy and high energy ion bombardment is investigated in terms of stress evolution, bonding structure, and stoichiometry using cantilever bending, FTIR, and ERD analysis.

1. W. Fukarek, J. Vac. Sci. Technol. A 19 (2001) 2017-2024