Dresden 2003 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 8: Harte Schichten II
DS 8.4: Vortrag
Montag, 24. März 2003, 16:00–16:15, GER/38
Heteroepitaxial Growth of Cubic Boron Nitride Films on Top of Diamond Film Substrates — •X.W. Zhang1, H.-G. Boyen1, N. Deyneka1, P. Ziemann1, M. Ozawa2, F. Banhart2, and M. Schreck3 — 1Abteilung Festkörperphysik, Universität Ulm, D-89069 Ulm — 2Zentrale Einheit Elektronenmikroskopie, Universität Ulm, D-89069 Ulm — 3Institut für Physik, Universität Augsburg, D-86135 Augsburg
In addition to hard coating applications, cubic boron nitride (c-BN) is also considered as a starting material for high-temperature electronic devices. In order to use c-BN for such a purpose, a high crystalline quality of the corresponding samples appears necessary. To approach this goal, heteroepitaxial c-BN films were grown by ion beam assisted deposition (IBAD) on highly oriented (100) diamond substrates at high temperatures (9000C). Characterization by Rutherford backscattering spectroscopy, transmission Fourier transformed infrared spectroscopy and high-resolution transmission electron microscopy showed that the c-BN films prepared at elevated temperatures on top of (100) diamond nucleate and grow directly on this substrate without an interfering hexagonal BN layer. Moreover, films consisting of 100% pure c-BN phase were found growing heteroepitaxially on these diamond substrates with a relative orientation given by c-BN(001)[100]||diamond(001)[100]. Atomic force microscopy of such high quality c-BN films shows a well-defined square pattern with an average lateral grain size of 3µm reflecting the grain boundaries of the underlying diamond substrate. These c-BN films also exhibit lower compressive stresses allowing to grow thick samples.