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DY: Dynamik und Statistische Physik

DY 27: Growth processes and interface features II

DY 27.4: Vortrag

Dienstag, 25. März 2003, 17:30–17:45, G\"OR/229

Rapid Roughening in Thin Film Growth of the Organic Semiconductor Diindenoperylene (DIP) — •Arndt Christian Dürr¹, Frank Schreiber^1,2,3, Ken A. Ritley^1,2, Volker Kruppa¹, Joachim Krug⁴, Helmut Dosch^1,2, and Bernd Struth⁵ — ¹Max-Planck-Institut für Metallforschung, Heisenbergstraße 3, 70569 Stuttgart — ²Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart — ³present address: University of Oxford, South Parks Road, Oxford OX1 3QZ, England — ⁴Fachbereich Physik, Universität Essen, 45117 Essen — ⁵ESRF, BP 220, 38043 Grenoble, France

We report the independent determination of the scaling exponents α, β and 1/z in highly ordered thin films of the organic molecule diindenoperylene (DIP) deposited on SiO₂ under UHV-conditions [1]. Non-contact AFM, x-ray reflectivity, and diffuse x-ray scattering were employed. The surface width displays power law scaling over more than two orders of magnitude in film thickness. We obtained α = 0.684 ± 0.06, β = 0.748 ± 0.05 and 1/z = 0.92 ± 0.20. Exceeding the random deposition limit β_RD = 0.5 and commonly expected values of 1/z, the derived exponents point to an unusually rapid growth of vertical roughness and lateral correlations. We suggest that they could be related to lateral inhomogeneities arising from the formation of grain boundaries between tilt-domains in the early stages of growth [2].

[1] A. C. Dürr, F. Schreiber, M. Münch, N. Karl, B. Krause, V. Kruppa, and H. Dosch, Appl. Phys. Lett. 81, 2276 (2002)

[2] A. C. Dürr, F. Schreiber, K. A. Ritley, V. Kruppa, J. Krug, H. Dosch, and B. Struth, Phys. Rev. Lett. in print