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DY: Dynamik und Statistische Physik
DY 27: Growth processes and interface features II
DY 27.4: Talk
Tuesday, March 25, 2003, 17:30–17:45, G\"OR/229
Rapid Roughening in Thin Film Growth of the Organic Semiconductor Diindenoperylene (DIP) — •Arndt Christian Dürr1, Frank Schreiber1,2,3, Ken A. Ritley1,2, Volker Kruppa1, Joachim Krug4, Helmut Dosch1,2, and Bernd Struth5 — 1Max-Planck-Institut für Metallforschung, Heisenbergstraße 3, 70569 Stuttgart — 2Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart — 3present address: University of Oxford, South Parks Road, Oxford OX1 3QZ, England — 4Fachbereich Physik, Universität Essen, 45117 Essen — 5ESRF, BP 220, 38043 Grenoble, France
We report the independent determination of the scaling exponents α, β and 1/z in highly ordered thin films of the organic molecule diindenoperylene (DIP) deposited on SiO2 under UHV-conditions [1]. Non-contact AFM, x-ray reflectivity, and diffuse x-ray scattering were employed. The surface width displays power law scaling over more than two orders of magnitude in film thickness. We obtained α = 0.684 ± 0.06, β = 0.748 ± 0.05 and 1/z = 0.92 ± 0.20. Exceeding the random deposition limit βRD = 0.5 and commonly expected values of 1/z, the derived exponents point to an unusually rapid growth of vertical roughness and lateral correlations. We suggest that they could be related to lateral inhomogeneities arising from the formation of grain boundaries between tilt-domains in the early stages of growth [2].
[1] A. C. Dürr, F. Schreiber, M. Münch, N. Karl, B. Krause, V. Kruppa, and H. Dosch, Appl. Phys. Lett. 81, 2276 (2002)
[2] A. C. Dürr, F. Schreiber, K. A. Ritley, V. Kruppa, J. Krug, H. Dosch, and B. Struth, Phys. Rev. Lett. in print