Dresden 2003 – scientific programme
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DY: Dynamik und Statistische Physik
DY 46: Poster
DY 46.77: Poster
Thursday, March 27, 2003, 15:30–18:00, P1
Current-Burst Model of Electrochemical Semiconductor Etching: Population Model and Coupled Current Bursts — •Jens Christian Claussen1,2, Jürgen Carstensen2, Marc Christophersen3, Sergiu Langa2, and Helmut Föll2 — 1Theoretical Physics, University Kiel, Germany — 2Chair of General Materials Science, Technical Faculty, University Kiel, Germany — 3Center of Future Health, Univ. of Rochester, NY
The Current Burst Model by Föll and Carstensen [1] together with the Aging Concept is a paradigmatic approach to the understanding of the widespread variety in self-organized structure formation in electrochemical semiconductor etching, including control aspects [2]. Surface passivation by H-termination depends on crystallographic orientation of the respective surface, thus governs geometry.
We discuss the most simplified version of this model, where surface elements act as stochastic automata driven by constant-voltage or constant-current conditions. Without lateral interaction, one has a population model of active surfaces of two classes of orientation. Transient Oscillations due to initial homogeneous or inhomogeneous surface passivation can occur. For refinement of the model, spatial interaction and geometrical aspects have to be included.
[1] http://www.tf.uni-kiel.de/matwis/amat/
[2] J.C.Claussen, J.Carstensen, M.Christophersen, S.Langa, H.Föll, Chaos (AIP), March 2003