Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 10: Halbleiterlaser II
HL 10.6: Vortrag
Montag, 24. März 2003, 16:30–16:45, BEY/81
Laser threshold reduction in a spintronic device — •Jörg Rudolph1, Daniel Hägele1, H. Gibbs2, G. Khitrova2, and Michael Oestreich1 — 1Universität Hannover, Institut für Festkörperphysik, Abteilung Nanostrukturen, Appelstr. 2, 30167 Hannover — 2Optical Sciences Center, University of Arizona, Tucson
Despite the progress made in the field of spintronics, a commercial application is still missing. We demonstrate that the injection of spin polarized electrons into a Vertical Cavity Surface Emitting Laser (VCSEL) leads to a clear reduction of the laser threshold which is a key figure for semiconductor laser applications.
For the experimental proof of concept, we inject spin polarized electrons into a VCSEL structure by pumping with short fs-pulses of a Ti:Sapphire laser. The emission dynamics is analyzed by a synchroscan streakcamera. The measurements clearly reveal a reduction of the laser threshold by about 25% for injection of electrons with 50% spin polarization in comparison to unpolarized electrons.
Based on a three-level rate equation model we show numerically that the concept is also valid for electrically pumped laser structures and even for cw operation with a threshold reduction of up to 50%.