Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 14: Poster I

HL 14.17: Poster

Monday, March 24, 2003, 17:00–19:30, HSZ/P2

Poly-Si IPG transistors for AMLCD — •Artsiom Lapanik and Andreas Wieck — Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150 D-44780 Bochum

IPG transistors were investigated not so long time ago, but there are already many techniques of preparation such transistors (focused Laser Beam Oxidation, diffusion, electron beam lithography and other sub micron processes). It has been shown recently that there are advantages to make IPG transistors with a focused ion beam (FIB) machine. FIB implants dopants without resist patterning directly into the semiconductor and thus is a very flexible tool for prototyping. Direct current properties of IPG are investigated recently.

Here we report on theoretical describing of IPG transistors and new techniques of preparation of transistors. Their properties are investigated. The new transistors are built by sputtering of Si with different ions and with different mask layers in comparing with previous technique (overcompensating thin lines in Si layer). New results are obtained that shows possibility of using IPG transistors for active matrix liquid crystal displays (AMLCD).