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HL: Halbleiterphysik

HL 14: Poster I

HL 14.21: Poster

Montag, 24. März 2003, 17:00–19:30, HSZ/P2

Hydrogen-related defects in ZnO studied by infrared absorption spectroscopy — •F. Börrnert¹, E.V. Lavrov¹, J. Weber¹, Chris G. Van de Walle², and R. Helbig³ — ¹Institut für Tieftemperaturphysik, Technische Universität Dresden, 01062 Dresden, Germany — ²Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 — ³Institute for Applied Physics, University of Erlangen, Germany

Due to recent progress in crystal growth and unique piezoelectric,optical, and electrical properties, ZnO is proposed as an alternative to GaN for use in optoelectronic devices. ZnO nearly always exhibits n-type condctivity. One of the possible causes of this conductivity is considered to be hydrogen, that according to first-principles investigations, in ZnO acts exclusively as donor.

Two hydrogen-related defects in ZnO are identified by a combination of local vibrational mode spectroscopy and fist-principles theory. The H-I center consists of one hydrogen atom at the bond-center site oriented along the c axis of the crystal. The H-II center contains two inequivalent hydrogen atoms primarily bound to oxygen atoms. Polarized absorption data allow us to identify H-II as a zinc vacancy decorated with two hydrogen atoms.