Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 14: Poster I

HL 14.51: Poster

Monday, March 24, 2003, 17:00–19:30, HSZ/P2

Investigation of the GaAs-PTCDA diodes in the low and high frequency ranges — •Georgi Ginev, Radoslav Parashkov, Tomas Riedl, Hans-Hermann Johannes, and Wolfgang Kowalsky — Institute of High Frequency Technology, Technical University Braunschweig, Schleinitzstrasse 22, D-38106 Braunschweig

The investigated devices are produced by combination of organic (PTCDA - 3,4,9,10-perylentetracarboxylic dianhydride) and inorganic(GaAs) semiconductors. Technology details as diode geometry, OMBD (Organic Molecular Beam Deposition) and as well a sulfur passivation procedure of the GaAs surface are briefly discussed. Frequency properties were estimated by concerning the possible application of a such type devices in the microwave range.

The work is kindly supported by the EU funded Human Potential Research Training Network - DIODE (Contract No. HPRN-CT-1999-00164).