Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 14: Poster I

HL 14.56: Poster

Monday, March 24, 2003, 17:00–19:30, HSZ/P2

Gas exposed phthalocyanine thin films on H-passivated Si studied by Inverse Photoemission Spectroscopy — •M. Gorgoi, T.U. Kampen, and D.R.T. Zahn — Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany

The electronic structure of phthalocyanine thin films is particularly important for applications as gas sensors, solar cells or organic light emitting devices. Therefore the unoccupied electronic states of phthalocyanine thin films grown on H-passivated Si(111) are investigated using inverse photoemission spectroscopy (IPES). The hydrogen passivation of the Si substrate consists of a wet chemical etching in a solution containing HF 40%. The Pc films were grown onto the substrates by organic molecular beam deposition. The spectra are recorded as a function of film thickness and gas exposure. The lowest unoccupied molecular orbital (LUMO) position is determined with respect to the Fermi edge and the LUMO shift as a function of the gas exposure time is presented.