Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 14: Poster I
HL 14.57: Poster
Montag, 24. März 2003, 17:00–19:30, HSZ/P2
Raman Scattering Study of C60 Based Organic Field Effect Transistors — •Beynor A. Paez, M. Bartzsch, S. Silaghi, T.U. Kampen, and D.R.T. Zahn — Insitut für Physik, Technische Universität Chemnitz, D-09107, Germany
Organic field effect transistor, OFET, structures with bottom gate configuration were characterized by in situ Raman spectroscopy, using the 514.5 nm laser line in order to study the charge profile in the C60 active layer in presence and absence of the electric field on the OFET structure. In addition Id-Vds and the Id-Vgs- characteristics were measured. Values of mobility in the range of 10−3,10−2 cm2 V−1 s−1 were performed from these measurements. The I-V characteristics were done with and without laser excitation in order to study the effect of illumination on charge carriers and significant differences are revealed. Raman spectra show pronounced changes upon application of a gate bias.