Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 14: Poster I

HL 14.61: Poster

Monday, March 24, 2003, 17:00–19:30, HSZ/P2

Photoluminescence characterization of the defects formed by ion implantation in Si — •Tzanimir Arguirov^1,2, Martin Kittler^3,2, Winfried Seifert^3,2, and Jürgen Reif^1,2 — ¹BTU-Cottbus, Lehrstuhl Experimentalphysik II - Materialwissenschaften, Universitätsplatz 3-4, 03044 Cottbus — ²IHP/BTU Jointlab, Universitätsplatz 3-4, 03044 Cottbus — ³IHP, Im Technologiepark 25, 15236 Frankfurt (Oder)

The ion implantation process in Si causes strong damage to the subsurface region, which is recovered by annealing. However, after the annealing procedure in most cases a damage still remains. The implanted sample region contains defects, which are detectable by means of photoluminescence. The depth distribution of the recombination active defects can be estimated by generation of minority carriers, close to the surface and recording the intensity of the luminescent light, emitted by their recombination . We can control the region of the photo excitation due to the wavelength dependant light penetration depth. Another possibility to modify the photon excitation is to apply an electric field, affecting the distribution of excess carriers generated near the surface. In this study we report luminescence dependence on excitation wavelength and on external electric field applied. We present results on phosphorus implanted Si samples, after different annealing steps.