Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 14: Poster I
HL 14.64: Poster
Montag, 24. März 2003, 17:00–19:30, HSZ/P2
A fast and easy tool for optimisation of GaN based laser diodes growth — •Viorel Dumitru, Ralf Härle, Alexei Ivanov, Galina Moutchnik, Ferdinand Scholz, and Heinz Schweizer — Universität Stuttgart, 4. Physikalisches Institut, Pfaffenwaldring 57, 70550 Stuttgart
In this paper we present the results of using a shadow-mask process as a quick feed-back to the epitaxial growth. The advantages of this technique is that, while allowing a fast and much simpler processing than a ridge or oxide stripe laser, it still provides valuable information as regard the influence of different epitaxial parameters on the device characteristics. Using this method we have investigated and compared different cap layers for contact technology like GaN, GaN/AlGaN superlatices, InGaN, as well as optimised the InGaN cap layer growth, obtaining a significant voltage drop reduction and minimum total differential resistivities below 1*10−4 Ω cm2 for our laser structures. More than these, by this method it is possible to generally monitorize the different epitaxial runs as regard the electrical properties of the grown laser structures, and also to characterize them by electroluminecence and optical loss measurements.