Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 14: Poster I

HL 14.70: Poster

Monday, March 24, 2003, 17:00–19:30, HSZ/P2

Growth and characterisation of Ge- and Ge_xSi_1−x- multilayers on virtual GeSi-substrates
— •T. Wietler, N. Hoffmann, E. Bugiel, and K.R. Hofmann — Inst. für Halbleiterbauelemente und Werkstoffe, Appelstr 11a, 30167 Hannover

Integration of strained Si/Ge-heterostructures in conventional silicon technology is a promising approach to combine high frequence devices and low production costs. A pre-requisite is the controlled growth of relaxed Ge_xSi_1−x buffers, which serve as virtual substrates for the subsequent fabrication of the strained layers. On Si(111) thin relaxed Ge_xSi_1−x films with high Ge content can be realized by surfactant mediated epitaxy (SME) employing Sb as surfactant. In detail, 5 nm thick Ge layers and strained Ge channels in Ge/Ge_xSi_1−x superlattices with x= 0.7 and 0.8 were grown on Ge_0.8Si_0.2/Si(111) virtual substrates. We will present atomic force microscopy, cross section transmission electron microscopy and auger electron spectroscopy depth profiling results, evaluating the surface morphologic and crystallographic quality.