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Dresden 2003 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 14: Poster I

HL 14.7: Poster

Montag, 24. März 2003, 17:00–19:30, HSZ/P2

GaAs wafer bonding using low energy hydrogen broad ion beam surface cleaning — •Nasser Razek, Axel Schindler, and Thomas Chasse — Leibniz-Institut für Oberflächenmodifizierung, Permoserstr. 15, D-04318 Leipzig

Direct wafer bonding (DWB) of 2-inch GaAs wafers was carried out in ultrahigh vacuum. The wafer surface war cleaned at temperatures as low as 120C by the bombardment of a mass separated low energy hydrogen broad ion beam (300eV) with a current density of ∼ 2.5µAcm−2. After the hydrogen ion beam cleaning the wafers were brought into contact face to face at room temperature under UHV conditions with a slight application of a load at the sample center followed by annealing the bonded wafers in UHV up to 150C after bonding, to obtain the bonding over the whole area. The surface chemistry of the wafers-contamination removal (native oxide and carbon) has been investigated with the help of X-ray photoelectron spectroscopy (XPS). The interface has been analyzed by infrared transmission imaging. Details of the interface structure as have been investigated by cross-sectional TEM.

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