Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 14: Poster I
HL 14.7: Poster
Montag, 24. März 2003, 17:00–19:30, HSZ/P2
GaAs wafer bonding using low energy hydrogen broad ion beam surface cleaning — •Nasser Razek, Axel Schindler, and Thomas Chasse — Leibniz-Institut für Oberflächenmodifizierung, Permoserstr. 15, D-04318 Leipzig
Direct wafer bonding (DWB) of 2-inch GaAs wafers was carried out in ultrahigh vacuum. The wafer surface war cleaned at temperatures as low as 120∘C by the bombardment of a mass separated low energy hydrogen broad ion beam (300eV) with a current density of ∼ 2.5µAcm−2. After the hydrogen ion beam cleaning the wafers were brought into contact face to face at room temperature under UHV conditions with a slight application of a load at the sample center followed by annealing the bonded wafers in UHV up to 150∘C after bonding, to obtain the bonding over the whole area. The surface chemistry of the wafers-contamination removal (native oxide and carbon) has been investigated with the help of X-ray photoelectron spectroscopy (XPS). The interface has been analyzed by infrared transmission imaging. Details of the interface structure as have been investigated by cross-sectional TEM.