Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 14: Poster I

HL 14.80: Poster

Monday, March 24, 2003, 17:00–19:30, HSZ/P2

A Field-Effect Transistor from Graphite - No Effect of Low Gate Fields — •Pablo Esquinazi and Heiko Kempa — Department of Superconductivity and Magnetism, University of Leipzig, D-04103 Leipzig

Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFETs and the recent attention to charge doping in carbon-based materials, we have made attempts to create a field-effect transistor from graphite. The main difficulty in doing this turned out to be the production of a stable dielectric layer on top of a graphite surface. However, a spray-coated layer of boron nitride has proofed to be stable enough both from mechanical and electrical point of view. In our case the layer thickness is 1 to 2 orders of magnitude larger than in the Si-MOSFETs, thus our electric gate fields are sufficiently smaller. In this field range there is no effect of charge doping observable.