Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 14: Poster I

HL 14.96: Poster

Monday, March 24, 2003, 17:00–19:30, HSZ/P2

Correlation of Local Morphological and Optoelectronic Features of Cu(GaIn)Se₂ Solar Cell Absorbers in the 2-Dimensional Spatial Frequency Domain — •G. H. Bauer¹, R. Fuhrmann¹, R. Brüggemann¹, K. Bothe² und T. Unold^1,3 — ¹Fachbereich Physik, Carl-von-Ossietzky Universität, 26111 Oldenburg — ²Inst. F. Solarenergieforschung, 31860 Hameln-Emmerthal — ³Max-Born Institut, 12489 Berlin

Lateral scans by (100µ m)² of the topology (AFM), of optical reflection (confocal microscopy), and of the splitting of quasi-Fermi levels under illumination (confocal calibrated photoluminescence) of Cu(InGa)Se₂ thin film solar cell absorbers yield access to characteristic features of semiconductor properties relevant for photovoltaic applications. With sub-micron lateral resolution we observe significant differences of morphological from optoelectronic properties and compare them in the spatial frequency domain. For morphology as well as for the splitting of the quasi-Fermi-levels (maximum open circuit voltage) we find different predominant regimes of spatial frequencies which we attribute to grain boundaries and to high minority life time regimes.