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HL: Halbleiterphysik

HL 14: Poster I

HL 14.97: Poster

Montag, 24. März 2003, 17:00–19:30, HSZ/P2

RECOMBINATION STUDIES IN a-Si:H/c-Si-HETEROJUNTIONS BY CALIBRATED PHOTOLUMINESCENCE — •Saioa Tardon, Rudolf Brueggemann, Thomas Unold, and G.H. Bauer — Department of Physics, Carl von Ossietzky University, D-26111 Oldenburg, F.R. Germany

Calibrated room temperature luminescence analyses under AM1-equivalent photon fluxes show strong dependence of pl-yields on type, thickness, and doping of passivation/window layers, which have been chosen p- and n-type doped, as well as undoped a-Si: H. The strong variations versus overlayer properties and nonlinerarities of pl-yield versus excitation levels, which we have translated into ideality factors of hypothetic diodes can be explained in terms of SRH-recombination in the bulk and by recombination via interface states. The access of carriers to interface recombination is strongly governed by surface band bending at the c-Si/a-Si:H interface and by tunnel probabilities of electrons and holes through the respective a-Si:H barrier.