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HL: Halbleiterphysik

HL 18: SiC II

HL 18.1: Vortrag

Dienstag, 25. März 2003, 11:00–11:15, BEY/118

High resolution x-ray diffraction measurements of 3C-SiC thin films grown on Ge modified Si (111) substrates — •petia weih, Volker Cimalla, Christian Förster, Jörg Pezoldt, and Oliver Ambacher — Center for Micro- and Nanotechnologies, Technical University Ilmenau, PF100565, D-98693 Ilmenau, Germany

In this work the biaxial stain of 120 nm thick 3C-SiC thin films epitaxially grown on on-axis Si(111) substrates by molecular beam epitaxy has been investigated by high resolution x-ray diffraction methods. Different techniques were applied to modify the surface of the Si substrate prior to the SiC deposition in order to reduce the strain and improve the structural quality of the epitaxial layers. The interface modification by predeposition of one monolayer Ge at different substrate temperatures, after or without annealing of the silicon initial surface, were compared. The reciprocal space maps obtained by x-ray diffraction revealed that the strain in Ge modified samples shows a transition from tensile to compressive strain depending on a change of the Ge deposition temperature. The highest tensile strain appeared in SiC layers grown on a thin Ge intermediate layer which was deposited (i) at room temperature prior to SiC growth without an additional annealing step of the substrate or (ii) deposited at high temperature after an annealing step. The lowest tensile strain appeared in layers with Ge predeposition at 325^∘ C onto an annealed substrate.