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HL: Halbleiterphysik

HL 2: III-V Halbleiter

HL 2.8: Vortrag

Montag, 24. März 2003, 12:15–12:30, BEY/118

Recombination in the hetero-structure InP/SnO₂ controlled by hot carrier dynamics. — •Matthias Neges, Klaus Schwarzburg, and Frank Willig — Hahn-Meitner-Institut, Department SE 4, Glienicker Str. 100, D-14109 Berlin, Germany

Photocurrent excitation spectra measured for the hetero-structure InP/SnO₂ at helium-temperatures show periodic dips versus photon energy. The latter arises from sequential emission of partially more than 10 LO-phonons by hot electrons and an enhanced recombination probability near the conduction band minimum of InP. It is well established that there is a direct relationship of these dips to peaks in the excitation spectra for luminescence, i.e. recombination. The device will be discussed also as a solar cell, where recombination losses are dominated by hot carrier dynamics.