HL 20: Halbleiterlaser III
Dienstag, 25. März 2003, 11:00–12:15, BEY/154
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11:00 |
HL 20.1 |
MBE Growth of (Ga,In)As/Al(As,Sb) MQWs for Intersubband Transition Wavelenghts <3.5 Micron — •K. Biermann, J. Böttcher, H. Künzel, S. Cronenberg, H.T. Grahn, L. Schrottke, N. Georgiev, T. Dekorsy, and M. Helm
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11:15 |
HL 20.2 |
Growth and characterization of In0.32Ga0.68As/In0.32Ga0.68P strain-compensated quantum cascade laser structure — •Mykhaylo Semtsiv, Mathias Ziegler, and Ted Masselink
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11:30 |
HL 20.3 |
Spiegelfacetten-Degradation von (AlIn)GaN-Laserdioden — •V. Kümmler, S. Bader, G. Brüderl, S. Miller, A. Leber, A. Weimar, A. Lell und V. Härle
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11:45 |
HL 20.4 |
Microscopic theory for the interplay of many-particle interactions and radiative damping on semiconductor intersubband transitions — •Inès Waldmüller, Jens Förstner, Andreas Knorr, Michael Woerner, Klaus Reimann, Robert A. Kaindl, Rudolf Hey, and Klaus H. Ploog
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12:00 |
HL 20.5 |
GaInP-Ridge-Trapezlaser hoher Brillianz — •Stefan Schmid, Martin Zimmermann, Monika Ubl, Hedwig Gräbeldinger, Heinz Schweizer, Ferdinand Scholz, Christian Karnutsch, Norbert Linder und Klaus Streubel
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