Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 21: Neue Materialien

HL 21.5: Talk

Tuesday, March 25, 2003, 12:30–12:45, BEY/118

Epitaxial Praseodymium Oxide on Silicon as an Alternative Gate Dielectric — •Sebastian Gottschalk, Horst Hahn, Joachim Brötz, and Gerhard Miehe — Darmstadt University of Technology, Materials Science, Petersenstr. 23, D-64287 Darmstadt

As integrated circuit scaling proceeds, alternative gate dielectrics with significant higher dielectric permittivity k than SiO₂ are urgently needed in Si based electronics. Thermodynamically stable and epitaxialy grown binary oxides on Silicon are also of great interest because of the potential application as buffer layers between high Tc superconductors or ferroelectrics, which could lead to completely new device designs. Pr₂O₃ films were prepared via electron beam MBE deposition. Pr₂O₃ as well as Pr₆O₁₁ source material was used. It was found that as a function of oxygen partial pressure, the deposited films vary in stoichiometry, which goes along with structural changes (amorphous, polycrystaline and epitaxial). X-ray photoelectron spectroscopy XPS was used to determine the chemical composition and interface properties. HRTEM and XRD was carried out. It was also shown that the oxide can be perfectly overgrown with silicon, which could be very promising for silicon on insulator SOI or tunnel devices.