Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 25: Organische Halbleiter II

HL 25.4: Talk

Tuesday, March 25, 2003, 16:00–16:15, BEY/81

Field effect mobility measurements of charge carriers in polymer - fullerene blends — •Elizabeth von Hauff, Vladimir Dyakonov, and Jörgen Parisi — Universität Oldenburg, Fachbereich Physik(EHF), C.v.Ossietzky

Organic field effect transistors (OFETs) were fabricated to investigate the charge carrier mobility in polymer - fullerene blends. OFETs offer the advantage over other mobility measurements in that the mobility of both types of charge carriers can be determined using the same device. The thin film transistor structure was used in order to accomodate the low conductivities of the materials investigated, and in the top contact configuration to avoid the effects of contact resistance. Temperature dependent mobility measurements were carried out on different concentrations of donor - acceptor blends. The donor used was OC1C10 - PPV and the acceptor fullerene used was PCBM. The field dependence of the mobility, charactersitic of OFET’s, was also investigated. The electron mobility was observed to increase with increasing PCBM : polymer ratio, while hole mobility decreased. The opposite was observed when polymer concentration was increased.