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HL: Halbleiterphysik
HL 3: Halbleiterlaser I
HL 3.1: Vortrag
Montag, 24. März 2003, 10:30–10:45, BEY/81
Post-growth increase of net acceptor concentration in ZnSe-based laser diodes — •Oliver Schulz1, Matthias Strassburg1, Anja Brostowski1, Udo W. Pohl1, Dieter Bimberg1, Matthias Klude2, and Detlef Hommel2 — 1Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 5-2, Hardenbergstrasse 36, 10623 Berlin, Germany — 2Universität Bremen, Institut für Festkörperphysik, Kufsteiner Strasse NW1, 28359 Bremen, Germany
The insertion of a Li3N interlayer between the metal electrode and the p-type contact layer is extremely promising for lifetime extension of ZnSe-based laser diodes. The observed parallel indiffusion of Li and N suggests the formation of a stable complex. To prove the effect of the combined indiffusion of Li and N on the free hole concentration, we prepared samples for Hall and planar capacitance-voltage measurements from contact structures. A free hole concentration of nearly 1×1019cm−3 was measured for several ZnSe/ZnTe-MQW contact structures. This value is at least one order of magnitude larger than typical p-type doping levels achieved by molecular beam epitaxy. Furthermore, compensation effects as previously reported for doping using either Li or N are not observed.
To investigate the influence of the interlayer on contact properties, a transmission line measurement was applied. First results show a strong decrease of the specific contact resistance. The obtained value of 1.5×10−4 Ω·cm2 is at least one order of magnitude lower than the best values reported for p-electrodes on ZnSe/ZnTe-MQW contact structures.