Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 30: Photovoltaik
HL 30.11: Vortrag
Mittwoch, 26. März 2003, 17:00–17:15, BEY/81
X-Ray Emission and Photoelectron Spectroscopy of Buried Interfaces in Cu(In,Ga)(S,Se)2 Thin Film Solar Cells with Novel Buffer Layers — •J. Reichardt1, M. Bär1, I. Lauermann1, I.M. Kötschau1, A. Grimm1, S. Sokoll1, M.Ch. Lux-Steiner1, Ch.H. Fischer1, L. Weinhardt2, O. Fuchs2, C. Heske2, C. Jung3, W. Gudat3, T.P. Niesen4, and F. Karg4 — 1HMI, Berlin — 2Uni Würzburg — 3BESSY, Berlin — 4Shell Solar, Munich
Current research on highly-efficient Cu(In,Ga)(S,Se)2 thin film solar cells focusses on a replacement of the industrially used CdS buffer layer and on the elimination of device degradation under damp-heat (DH) conditions.
A combined surface/interface study with bulk sensitive X-ray emission and surface sensitive photoelectron spectroscopy was conducted in the newly developed CISSY synchrotron endstation at BESSY.
We have investigated alternative ZnO/Zn(OH)2 buffer layers deposited by the sequential ion layer gas reaction (ILGAR). We observe the formation of a sulfate species at the interface between buffer/absorber during deposition. The composition and morphology of the buffer layer before and after DH treatment was studied and its impact on the structural and electronic properties of the solar cell device will be discussed.