Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 30: Photovoltaik

HL 30.3: Talk

Wednesday, March 26, 2003, 15:00–15:15, BEY/81

Van der Waals epitaxy of Mo6Se8 and MoSe2 on HfS2 — •Thorsten Zandt, Christof Gaiser, Ralf Severin, Steffen Duhm, Alica Krapf, Christoph Janowitz, and Recardo Manzke — Institut f. Physik, Humboldt-Universität zu Berlin, Invalidenstraße 110, 10115 Berlin

The transition metal dichalcogenides are an interesting group of materials due to their high absorption coefficient and the two- dimensional behaviour. Van der Waals-epitaxy (vdWe) is an excellent tool to produce high quality thin films of these low-dimensional materials. In the present work we applied van der Waals epitaxy to grow thin epitaxial films of Mo6Se8 and MoSe2 on a HfS2 substrate. The HfS2 has been grown by chemical vapour transport (CVT). Epitaxial growth and geometrical structure of the Mo6Se8 and MoSe2-films have been controlled by low energy electron diffraction (LEED). The two different stoichiometric phases were identified by Auger electron spectroscopy (AES) and energy dispersive X-ray analysis (EDX) and will be present ed together with scanning tunnelling microscopy (STM) and angular-resolved photoelectron spectroscopy (ARPES) results.